[Archived] ISPSD 2022 LATE NEWS SUBMISSION

Submissions for Late News papers is OPEN. All submissions must be made on-line via Epapers:

The paper must be prepared in the final paper format given in the Author Information page (4-page maximum)
Email submissions will NOT be accepted
Late news papers must be submitted by March 11, 2022 [11PM EST]

Topics of interest include, but are not limited to:

High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes.
Low Voltage Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges.
Power IC Design (ICD): Circuit design and demonstration using power IC technology platform.
GaN and Compound Materials: Device and technology (GaN): GaN and compound materials (e.g. AlN, Ga₂O₃, GaAs) based power devices, technology and integration, materials, and processing.
SiC and Other Materials: SiC and other material (e.g. Ga₂O₃, diamond) based power devices, technology and integration, materials, and processing.
Module and Package Technologies (PK): Module and package technology for discrete power devices and power ICs.

Additional details on the Topics of Interest can be found in the PDF version of the Call for Papers.

IMPORTANT DATES

Late News submission deadline is	Mar 11, 2022
Author notification sent out by	Mar 21, 2022

General Chair: Prof. Wai Tung Ng
University of Toronto, Canada

Technical Program Chair: Dr. David Sheridan
Alpha & Omega Semiconductor, USA