Executive Committee
| General Chair | Wai Tung Ng University of Toronto, Canada |
| Technical Program Chair | David Sheridan Alpha Omega Semiconductor, USA |
| Finance Co-Chairs | Olivier Trescases University of Toronto, Canada |
| Fred Fu Xiinergy Systems Inc., Canada |
|
| Publicity Chair | Amit Paul onsemi, USA |
| Industrial and Exhibition Chair | Sameh Khalil Infineon, USA |
| Publications Chair | Sameer Pendharkar Texas Instruments, USA |
| Short Courses Chair | Tomas Palacios Massachusetts Institute of Technology, USA |
| Local Arrangements Chair | Weijia Zhang Analog Devices Inc., USA |
| Webmaster | Mengqi Wang University of Toronto, Canada |
| Past General Chair | John Shen Illinois Institute of Technology, USA |
| Vice General Chairs | Kevin Chen Hong Kong University of Science and Technology, Hong Kong |
| Nando Kaminski University of Bremen, Germany |
Technical Program Committee
Chair
David Sheridan, Alpha Omega Semiconductor, USA
Category 1: High Voltage Power Devices (HV)
Chair: Fred Fu, Xiinergy Systems, Inc., Canada
Giovanni Breglio, University of Naples Federico II, Italy
Chiara Corvasce, Hitachi ABB Power Grids, Switzerland
Shigeto Honda, Mitsubishi Electric Corporation, Japan
Noriyuki Iwamuro, University of Tsukuba, Japan
Xiaorong Luo, University of Electronic Science and Technology of China, China
Yuichi Onozawa, Fuji Electric, Japan
Yi Tang, Starpower Semiconductor, China
Tanya Trajković, CAM MuTronics, UK
Jun Zeng, MaxPower Semiconductor, USA
Category 2: Low Voltage Devices and Power IC Technology (LVT)
Chair: Ronghua Zhu, NXP Semiconductors, USA
Riccardo Depetro, STMicroelectronics, Italy
Hiroki Fujii, Samsung Electronics, Korea
Mark Gajda, Nexperia , UK
Sang-Gi Lee, Dongbu HiTek's, Korea
Takahiro Mori, Renesas Electronics Corp., Japan
Tatsuya Nishiwaki, Toshiba Electronic Devices & Storage Corporation, Japan
Amit Paul, onsemi, USA
Kuo Ming Wu, TSMC, Taiwan
Category 3: Power IC Design (ICD)
Chair: John Pigott, NXP Semiconductors, USA
Bruno Allard, INSA (+ Ampere Lab), Lyon, France
Laurent Chevalier, STMicroelectronics, France
Katsumi Eikyu, Renesas Electronics Corp., Japan
Kenji Hara, Hitachi, Japan
Xin Ming, University of Electronic Science and Technology of China, China
Budong (Albert) You, Silergy Corp., China
Weijia Zhang, Analog Devices, Canada
Jing Zhu, Southeast University, China
Category 4: GaN and Compound Materials: Device and technology (GaN)
Chair: Tomas Palacios, Massachusetts Institute of Technology, USA
Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
Sameh Khalil, Infineon Technologies, USA
Yang Liu, Sun Yat-sen University, China
Elison Matioli, EPFL, Switzerland
Yoshinao Miura, AIST, Japan
Hideyuki Okita, Panasonic, Japan
Niels Posthuma, IMEC, Belgium
Tom Tsai, TSMC, Taiwan
Grace Xing, Cornell University, USA
Shu Yang, Zhejiang University, China
Category 5: SiC and Other Materials (SiC)
Chair: Sei-Hyung Ryu, Wolfspeed , USA
Song Bai, Nanjing Electronic Device Institute, China
Alexander Bolotnikov, onsemi, USA
Ian Chan, Cyntec, Taiwan
Ulrike Grossner, ETH, Switzerland
Hiroshi Kono, Toshiba Electronic Devices & Storage Corporation, Japan
Chwan Ying Lee, Hestia-Power Inc., Taiwan
Kevin Matocha, unaffiliated, USA
Andrei Petru Mihaila, Hitachi ABB Power Grids, Switzerland
Naruhisa Miura, Mitsubishi Electric Corporation, Japan
Yasuhiko Onishi, Fuji Electric, Japan
Dethard Peters, Infineon Technologies, Germany
Sid Sundaresan, GeneSiC, USA
Woongje Sung, SUNY Polytechnic Institute, USA
Category 6: Module and Package Technologies (PK)
Chair: Alberto Castellazzi, Kyoto University of Advanced Science, Japan
Sven Berberich, Semikron, Germany
Wei-Chung Lo, Industrial Technology Research Institute (ITRI), Taiwan
Tomoyuki Miyoshi, Hitachi, Japan
Bassem Mouawad, Nottingham University, UK
Ichiro Omura, Kyushu Institute of Technology, Japan
Yang Xu, Tesla, USA
